Trench transistor, has field formed between trenches and having drift field and body field with body contact and source fields, where breakthrough is formed in field for increasing avalanche rigidity in depth lying in area of trench bottom

摘要

The transistor has trenches formed inside a semiconductor body and an isolation layer provided adjacent to the body. A gate electrode is provided adjacent to the layer in the trench. A field formed between the trenches has a drift field (D) and a body field with body contact and source fields. A breakthrough is formed in the field for increasing the avalanche rigidity in a depth lying in the area of a trench bottom. An independent claim is also included for a method of manufacturing a trench transistor.