NAND flash memory device has memory cells in memory block and page groups that are independently erased, based on division signal

摘要

The device has memory blocks (BLK) which are divided into page groups (BLKa,BLKb). A block division selector (110) outputs division signal to whether active one or both the page groups. The memory blocks have block switches (130a,130b) to select page group in response to block selection address signal. The memory cells in memory block are erased or memory cells in page groups are independently erased, based on division signal.