Production of a sapphire substrate used in the production of semiconductor microelectronic or optoelectronic components comprises separating the substrate from a sapphire crystal along a crystallographic a-axis of the sapphire crystal

摘要

Production of a sapphire substrate orientated on the crystal axis comprises separating the substrate (2) from a sapphire crystal (1) along a crystallographic a-axis of the sapphire crystal. Independent claims are also included for the following: (1) Device for producing a sapphire substrate orientated on the crystal axis; and (2) Sapphire substrate produced by the above process. Preferred Features: The separation method is carried out with a maximum deviation from the crystallographic a-axis of the substrate of +/- 2[deg], preferably +/- 1[deg], especially +/- 0.5[deg]. The sapphire crystal is prepared by pulling from a melt. The melt is doped with titanium, chromium or iron.