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METHOD FOR PRODUCING SAPPHIRE SINGLE CRYSTAL, SAPPHIRE SUBSTRATE, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT
METHOD FOR PRODUCING SAPPHIRE SINGLE CRYSTAL, SAPPHIRE SUBSTRATE, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT
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机译:制备蓝宝石单晶,蓝宝石基质和半导体发光元件的方法
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摘要
Aluminum oxide and an additive that contains an oxide of an additional element composed of at least one element selected from among silicon, germanium and tin are introduced into a crucible (15), while setting the weight concentration of the additive within the range of 30-500 ppm relative to the aluminum oxide, and after obtaining an alumina melt (35) by melting the aluminum oxide and the additive in the crucible (15), a sapphire ingot (30) that contains the aluminum oxide and the additive and has a sapphire single crystal structure is pulled up from the alumina melt (35) in the crucible (15). The thus-pulled up sapphire ingot (30) has a weight concentration of the additional element of 2-80 ppm relative to the aluminum oxide. Consequently, there can be provided a sapphire single crystal ingot having a small strain, a sapphire substrate, and a high quality semiconductor light emitting element that is obtained by forming a compound semiconductor layer on a sapphire substrate.
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