METHOD FOR PRODUCING SAPPHIRE SINGLE CRYSTAL, SAPPHIRE SUBSTRATE, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a sapphire single crystal ingot having a small strain, to provide a sapphire substrate, and to provide a high quality semiconductor light emitting element that is obtained by forming a compound semiconductor layer on a sapphire substrate.;SOLUTION: Aluminum oxide and an additive that contains the oxide of an additional element composed of at least one element selected from among silicon, germanium and tin are introduced into a crucible 15, while setting the weight concentration of the additive within the range of 30-500 ppm relative to the aluminum oxide, and after obtaining an alumina melt 35 by melting the aluminum oxide and the additive in the crucible 15, a sapphire ingot 30 that contains the aluminum oxide and the additive and has a sapphire single crystal structure is pulled up from the alumina melt 35 in the crucible 15. The thus-pulled up sapphire ingot 30 has a weight concentration of the additional element of 2-80 ppm relative to the aluminum oxide.;COPYRIGHT: (C)2012,JPO&INPIT