Semiconductor appliance with active layer formed by biased silicon layer, in which is formed insulating layer under source/drain zones for improvement of operational characteristics of semiconductor appliance

摘要

Semiconductor appliance incorporates biased silicon substrate, germanium layer and second silicon layer, formed sequentially. Biased silicon substrate is defined as active and field regions. In active region of substrate is formed gate electrode. Source and drain regions are formed at either side of gate electrode in biased silicon substrate. Under source and drain regions is formed insulating layer is biased silicon substrate. Preferably, intermediate layer on side wall of gate electrode. Independent claims are included for manufacturing method of semiconductor appliance.