CVD REACTOR SYSTEM AND METHOD OF CVD SURFACE COATING

摘要

A system for depositing a layer of metal onto a substrate through a chemical vapor deposition process comprises a process chamber for receiving and processing a substrate. A vaporizer element is positioned in a vaporization space of the chamber adjacent the process space, and is operable for being heated to a temperature sufficient to vaporize a liquid metal-containing precursor, such as a copper precursor, into a process gas for delivery to said process space. A nozzle is positioned opposite the vaporizer element and is connectable to a liquid metal-containing precursor supply to atomize and direct the liquid metal-containing precursor into the vaporization space and against the vaporizer element. A gas-dispersing element is positioned between the vaporization space and the process space to disperse the gas into the process space and proximate the substrate.