APPARATUS FOR MAGNETRON SPUTTER FILM DEPOSITION, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of depositing a ferroelectric film having excellent crystallinity even when performing sputtering by a target with advanced erosion, and enhancing a yield.;SOLUTION: A magnetron sputter film deposition apparatus comprises an evacuated film deposition chamber 11, an electrostatic chuck means 12 capable of adjusting the temperature of a substrate 14 to be treated, a target 15 for performing the high frequency magnetron sputtering of the substrate 14, a gas feed means 11a for feeding a discharge gas to the evacuated film deposition chamber 11, a power supply means 17 which applies the discharge voltage between the substrate 14 and the target 15 and measures the integral power consumption L1 (kWh) of electricity discharged by the target 15, and a control means 18 for controlling the electrostatic chuck means 12 and the power supply means 17. The optimum temperature of the substrate 14 for the sputtering is calculated on the basis of the integral power consumption of the electricity discharged by the target 15, and the sputtering is performed after adjusting the temperature of the substrate 14 at a predetermined value.;COPYRIGHT: (C)2008,JPO&INPIT