TUNGSTEN COMPOUND AND MOLYBDENUM COMPOUND AND USE THEREOF FOR CVD (CHEMICAL VAPOR DEPOSITION)

摘要

PROBLEM TO BE SOLVED: To provide a further new precursor, especially the precursor of a WN (tungsten nitride) layer having no conventional disadvantage or bringing about a marked improvement over at least the well-known precursor.;SOLUTION: A compound is represented by general formula (I) [wherein, M, R¹, R², R³, R⁴, R⁵ and R⁶ have each a specific meaning].;COPYRIGHT: (C)2007,JPO&INPIT