MANUFACTURING METHOD OF LOCAL WIRING ON SILICON-GERMANIUM THREE-DIMENSIONAL STRUCTURE CMOS

摘要

PROBLEM TO BE SOLVED: To form local wiring between a silicon CMOS element and a germanium CMOS element easily, in a silicon-germanium three-dimensional structure CMOS.;SOLUTION: A silicon substrate having a silicon CMOS element is prepared (12), and an insulating layer is formed on the top of the element (14). The insulating layer is partially opened (16), and then a germanium thin film is formed thereon (18). By annealing treatment, the germanium of the thin film is fluidized (24). Thereby the germanium flows into the opening part, and a contact point is formed between the germanium and the silicon substrate, the silicon CMOS element. In addition, by cooling, the germanium is crystallized by LPE growth (26). Thereby the germanium CMOS element is formed on a single crystal germanium.;COPYRIGHT: (C)2007,JPO&INPIT