p-CHANNEL THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE p-CHANNEL THIN-FILM TRANSISTOR, AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin-film transistor with which a TFT having higher mobility of electrons (or holes) can be manufactured, a method of manufacturing the thin-film transistor, and a display device.;SOLUTION: The thin-film transistor 1 has a source region S, a channel region C and a drain region D which are provided on a semiconductor thin film 4a that is crystal-grown in a lateral direction; and a gate insulation film 11 and a gate electrode 12 which are provided on the top of the channel region C. An end of the drain 10 on the channel region C side of the drain region D is formed so as to be positioned near the finish position 8 of the crystal growth.;COPYRIGHT: (C)2007,JPO&INPIT