首页> 外国专利> CHARGED PARTICLE BEAM DEVICE, FOCUS ADJUSTING METHOD OF CHARGED PARTICLE BEAM, MEASURING METHOD OF FINE STRUCTURE, INSPECTION METHOD OF FINE STRUCTURE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

CHARGED PARTICLE BEAM DEVICE, FOCUS ADJUSTING METHOD OF CHARGED PARTICLE BEAM, MEASURING METHOD OF FINE STRUCTURE, INSPECTION METHOD OF FINE STRUCTURE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

机译:带电粒子束设备,带电粒子束的聚焦调整方法,精细结构的测量方法,精细结构的检查方法以及半导体器件的制造方法

摘要

PROBLEM TO BE SOLVED: To adjust a focus of charged particle beam with high accuracy while reducing damage onto a sample.;SOLUTION: Focus adjusting areas P1 to Pn, including contour points of a pattern inside respectively, are arranged, and the focus adjusting areas P1 to Pn are successively scanned by an electron beam EB in correspondence with respective exciting conditions while changing the exciting conditions of an object lens 22 stepwise. An indicator expressing focusing state of the electron beam EB at respective exciting conditions is calculated on the basis of respective exciting conditions and detected signals related to respective focus adjusting areas obtained, and an optimum exciting condition for obtaining optimum focus position is calculated from the obtained indicator.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:在减少对样品的损害的同时,高精度地调节带电粒子束的聚焦。解决方案:布置聚焦调节区域P1至Pn,分别包括内部图案的轮廓点,并且聚焦调节区域P1至Pn在分别逐步改变物镜22的激发条件的同时,由电子束EB按照各自的激发条件连续扫描。基于各个激发条件和与所获得的各个聚焦调节区域有关的检测信号,计算表示电子束EB在各个激发条件下的聚焦状态的指示符,并且从所获得的指示符计算用于获得最佳聚焦位置的最佳激发条件。 。;版权:(C)2007,日本特许厅和INPIT

著录项

  • 公开/公告号JP2007200595A

    专利类型

  • 公开/公告日2007-08-09

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP20060014902

  • 发明设计人 ABE HIDEAKI;MOTOKI HIROSHI;

    申请日2006-01-24

  • 分类号H01J37/21;H01J37/28;

  • 国家 JP

  • 入库时间 2022-08-21 21:12:48

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