HIGH-OUTPUT SEMICONDUCTOR LASER DEVICE

摘要

PPROBLEM TO BE SOLVED: To provide a high-output semiconductor laser device that suppresses the occurrence of higher order modes and can reduce the loss of internal light. PSOLUTION: The semiconductor laser device 30 includes; first and second conductivity-type cladding layers 32, 35; an active layer 34 formed between the cladding layers; and first and second light guide layers 33a, 33b formed between the first and second conductivity-type cladding layers and the active layer. In this case, at least one of the first and second conductivity-type cladding layers is light loss suppression regions 32a, 35a that are overlapped to the distribution of laser beams and prevent at least a partial region from being doped intentionally. PCOPYRIGHT: (C)2007,JPO&INPIT