POSITIVE RESIST COMPOSITION, POSITIVE RESIST COMPOSITION FOR THERMAL FLOW, AND RESIST PATTERN FORMING METHOD

摘要

PPROBLEM TO BE SOLVED: To achieve excellent controllability of resist pattern size in a thermal flow process using a resist composition for use in ArF excimer laser lithography or the like. PSOLUTION: A positive resist composition is provided which contains a resin component (A) and an acid generator component, wherein the component (A) contains a high molecular compound (A1) containing a (meth)acrylate constitutional unit (a0) having an acid-dissociable dissolution inhibiting group containing a tertiary alkyl group and a constitutional unit (a2) derived from an acrylic ester containing a lactone-containing cyclic group. PCOPYRIGHT: (C)2007,JPO&INPIT