METHOD OF MANUFACTURING GALLIUM NITRIDE TRANSISTOR, METHOD OF PROCESSING GALLIUM NITRIDE SEMICONDUCTOR REGION, AND METHOD OF ELIMINATING RESIST

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing gallium nitride transistors for reducing the occurrence of nitrogen vacancy in removing resist, a method of processing a gallium nitride semiconductor region, and a method of removing the resist.;SOLUTION: A resist mask 29 with a pattern is provided on a substrate 19a, including first and second gallium nitride semiconductor layers 13a, 15a for the gallium nitride transistors. The gallium nitride semiconductor of the substrate 19a is etched, by using the resist mask 29 to form the first and second gallium nitride semiconductor layers 13a, 15a, which have been partially removed. After the etching, the substrate 19a is exposed to fluorine gas plasma 39, to remove the resist mask 29 and to apply nitrogen termination to the surface of the substrate 19a. The occurrence of desorption of nitrogen is reduced from the substrate surface.;COPYRIGHT: (C)2007,JPO&INPIT