PROBLEM TO BE SOLVED: To enable p-type conduction without deterioration of a crystal of a light emitting layer and without contamination at a low cost and realize a good ohmic contact with an electrode.;SOLUTION: A method for manufacturing a p-type gallium nitride compound semiconductor comprises a first step of manufacturing a gallium nitride compound semiconductor layer 3 in which a p-type impurity is added, a second step of manufacturing a catalytic layer 7 made of a metal or the like on the layer 3, and a third step of heat treating the layer 3 in a state in which the layer 7 is attached.;COPYRIGHT: (C)2002,JPO
展开▼
