The heterojunction bipolar transistor which includes with the emitter which is located on the heterojunction bipolar transistor and

摘要

PROBLEM TO BE SOLVED: To provide an HBT where the problem regarding low current gain can be solved, while material which is easy to manufacture is selected, and to provide a method for manufacturing the HBT.;SOLUTION: This heterojunction bipolar transistor(HBT) (100) contains a collector (104), a base (108) positioned on the collector (104), and an emitter (114) positioned on the base (108). The emitter (114) contains an intermediate layer (110) which is in contact with the base (108), the intermediate layer (110) practically has electrical permeability with respect to the base (108) and the emitter (114), and lattice constants of the intermediate layer (110) match with those of the base (108) and the emitter (114).;COPYRIGHT: (C)2002,JPO