Growth manner of the nitriding gallium based compound semiconductor, and production manner of the nitride semiconductor device which uses that, on the production mannered null substrate

摘要

PROBLEM TO BE SOLVED: To manufacture a gallium nitride-based compound semiconductor substrate which eliminates a device process such as a transverse-direction growth process or the like to the substrate and whose defect is low.;SOLUTION: In the method for growing the gallium-nitride-based compound semiconductor on the substrate, a growth speed is changed, and the compound semiconductor is grown at two stages by a hydride vapor-phase epitaxial growth method.;COPYRIGHT: (C)2002,JPO