Being the manner which eases the stress of the silicon oxide film which is provided on the oxide film

摘要

PROBLEM TO BE SOLVED: To provide a method of reducing the stress of an oxide film without causing any damage to a silicon substrate and the oxide film.;SOLUTION: In the method of reducing the stress of the oxide film formed on the silicon substrate, radical atoms are irradiated on the oxide film to be mixed in atoms deviated from the radical atoms evenly into the entire oxide film, selectively eliminating defects existent inside the oxide film or in an interface between the oxide film and the silicon substrate and consequently reducing the stress of the oxide film.;COPYRIGHT: (C)2003,JPO