Production manner of the silicon germanium film, the substrate for the grow epitaxially, the multilayer film structure and the process which prepares the heterojunction

摘要

PROBLEM TO BE SOLVED: To isotropically and uniformly relax an internal strain in a silicon germanium film.;SOLUTION: A method for manufacturing the silicon germanium film includes the steps of: forming a germanium interfacial layer 12 functioned as a dislocation control layer on a silicon substrate 11; and forming the silicon germanium film 14 on the substrate 11 via the germanium interfacial layer 12, thereby forming a 90° dislocation at least at the substrate 11 side in the silicon germanium film 14.;COPYRIGHT: (C)2004,JPO