首页> 外国专利> Write assist for latch and memory circuits

Write assist for latch and memory circuits

机译:锁存和存储电路的写辅助

摘要

One embodiment provides a system to assist setting a state of a latch system. The system includes a latch system connected to a node, the latch system residing in one of a first state and a second state. A charge storage device is coupled to maintain the node at a first voltage according to an amount of stored charge. A write assist system is connected between the node and a second voltage. The write assist network is configured, when the node is selected, to discharge the charge storage device and to pull the node from the first voltage to a discharge voltage that is outside a range defined by the first voltage and the second voltage to facilitate setting the latch system to another of the first state and the second state.
机译:一个实施例提供了一种辅助设置闩锁系统的状态的系统。该系统包括连接到节点的锁存器系统,该锁存器系统处于第一状态和第二状态之一。耦合电荷存储装置以根据所存储的电荷量将节点维持在第一电压。写辅助系统连接在节点和第二电压之间。写入辅助网络配置中,当选择的节点上,以排出电荷存储装置,并从所述第一电压节点拉至放电电压,该电压由第一电压和便于设置第二电压所定义的范围之外的将系统锁存到第一状态和第二状态中的另一个。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号