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PROCESS FOR MANUFACTURING A PHASE CHANGE SELECTION DEVICE WITH REDUCED CURRENT LEAKAGE, AND PHASE CHANGE SELECTION DEVICE, IN PARTICULAR FOR PHASE CHANGE MEMORY DEVICES
PROCESS FOR MANUFACTURING A PHASE CHANGE SELECTION DEVICE WITH REDUCED CURRENT LEAKAGE, AND PHASE CHANGE SELECTION DEVICE, IN PARTICULAR FOR PHASE CHANGE MEMORY DEVICES
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机译:制造具有减小的电流泄漏的相变选择设备和相变选择设备的过程,特别是用于相变存储器设备
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摘要
In a phase change memory including an ovonic threshold switch, conduction around the phase change material layer in the ovonic threshold switch is reduced. In one embodiment, the reduction is achieved by undercutting the conductive layers on either side of the phase change material layer. In another embodiment, an angled ion implantation is carried out which damages the edge regions of the conductive layers that sandwich the phase change material layer.
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