HIGHLY INTEGRATED PHASE CHANGE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF CAPABLE OF ENHANCING RESET CURRENT FEATURES BY REDUCING THE SIZE OF AN AREA WHERE A PHASE CHANGE NANO BAND CONTACTS A HEATING ELECTRODE

摘要

PURPOSE: A highly integrated phase change memory device and manufacturing method thereof are provided to contact a plurality of phase change bands whose phase change features are different by one heating electrode, thereby realizing a multi level by a simple method by generating resistance distribution under different operation conditions.;CONSTITUTION: An insulating film(110) is formed on a semiconductor substrate(100) with an access device(115). A heating electrode(120) is formed on the access device. The heating electrode has the same line width as the access device. A phase change nano band(140) is formed on the heating electrode. An interlayer insulating film(150) is formed on both sides of the phase change nano band to support the phase change nano band.;COPYRIGHT KIPO 2011