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Semiconductor device having a gate electrode material feature located adjacent a gate width side of its gate electrode and a method of manufacture therefor
Semiconductor device having a gate electrode material feature located adjacent a gate width side of its gate electrode and a method of manufacture therefor
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机译:具有位于其栅极的栅极宽度侧附近的栅极材料特征的半导体器件及其制造方法
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摘要
The present invention provides a semiconductor device, a method of manufacture therefore and an integrated circuit including the same. The semiconductor device (300), without limitation, may include a gate electrode (320) having a gate length (l) and a gate width (w) located over a substrate (310) and a gate electrode material feature (330) located adjacent a gate width (w) side of the gate electrode (320). The semiconductor device (300) may further include a silicide region (350) located over the substrate (310) proximate a side of the gate electrode (320), the gate electrode material feature (330) breaking the silicided region (350) into multiple silicide portions (353, 355, 358).
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