METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE TO IMPROVE CRYSTALLINITY OF UPPER AND LOWER ELECTRODE MATERIAL LAYERS ADJACENT TO RUTHENIUM OXIDE LAYER EVEN AFTER HIGH TEMPERATURE HEAT TREATMENT AND REDUCE SHEET RESISTANCE OF GATE ELECTRODE

摘要

A kind of purpose: method, it is oxidizing metal even if the gate electrode for being used to form semiconductor device is arranged to improve the crystallinity of the upper/lower electrode material layer near a ruthenium oxide layer after high thermotherapy and reduces the sheet resistance of a gate electrode deposited oxide layer of ruthenium, such ruthenium oxide layer between a polysilicon layer and a tungsten layer and there is good electric conductivity and physical/chemical stability. Construction: a gate insulating layer (102) is formed in semi-conductive substrate (101). One polysilicon layer (103) is deposited on gate insulating layer. Ruthenous oxide layer (104) is deposited on polysilicon layer. A metal layer is deposited on ruthenium oxide layer. Composite structure includes that metal layer is patterned to one gate electrode of form.