Semiconductor memory unit has multiple fin semiconductors, and gate electrode is provided in recess, which is located between fin semiconductors and are adjacent to each other and another gate electrode

摘要

The semiconductor memory unit has multiple fin semiconductors. A gate electrode, which is provided in a recess, which is located between the fin semiconductors and are adjacent to each other and another gate electrode, which are provided in another recess adjacent to the former recess and are located between the fin semiconductors, and are adjacent to each other. The bit lines are connected with the drain layers, and extend in the former direction.