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Semiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recess
Semiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recess
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机译:半导体器件,其栅电极在鳍片结构上具有间隔物,并且硅化物层填充凹槽
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摘要
An semiconductor device is provided. A fin is disposed on a substrate, extending in a lengthwise direction. A first recess is disposed on a sidewall of the fin so that the fin and the first recess is arranged in a straight line along the lengthwise direction. A gate structure crosses the fin in the first direction crossing the lengthwise direction. A spacer is disposed on sidewalk of the gate structure. A source/drain region is disposed in the first recess. The source/drain region is formed under the spacer. A silicide layer is disposed on the source/drain region. The silicide layer and the source/drain region fill the first recess.
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