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Nonvolatile semiconductor memory device in which write and erase threshold voltages are set at levels symmetrical about neutral threshold voltage of cell transistor
Nonvolatile semiconductor memory device in which write and erase threshold voltages are set at levels symmetrical about neutral threshold voltage of cell transistor
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机译:非易失性半导体存储器件,其中将写和擦除阈值电压设置为关于单元晶体管的中性阈值电压对称的电平
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摘要
A semiconductor device includes a memory cell and driver. The memory cell has a cell transistor which has one end of a current path connected to a bit line and stores data by storing charges in a floating gate, and a selector gate transistor which has one end of a current path connected to the other end of the current path of the cell transistor and the other end of the current path connected to a source line. The driver is configured to apply, to the control gate of the cell transistor in read, a potential of the same sign as that of a potential applied to the gate of the selector gate transistor.
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