首页> 外国专利> Method for treating vapor deposition apparatus, method for depositing thin film, vapor deposition apparatus and computer program product for achieving thereof

Method for treating vapor deposition apparatus, method for depositing thin film, vapor deposition apparatus and computer program product for achieving thereof

机译:用于处理气相沉积设备的方法,用于沉积薄膜的方法,气相沉积设备以及用于实现该方法的计算机程序产品

摘要

A method for treating a vapor deposition apparatus, a method for depositing a thin film, a vapor deposition apparatus and a computer program product are disclosed for providing a reduced cleaning frequency. Accumulated material is deposited on an interior wall of a chamber of a vapor deposition unit during deposition of a thin film. While the deposition of the thin film is repeated, a gas is emitted from the accumulated material to deteriorate an uniformity in the film thickness of the thin film. The method involves depositing an amorphous film to cover the accumulated material before any influence of the accumulated material deposited on the interior wall of the chamber on the thickness of the thin film is evident. Gas emission from the accumulated material can be prevented by covering the accumulated material with the amorphous film. This configuration provides a thin film having an improved uniformity of thickness.
机译:公开了一种用于处理汽相沉积设备的方法,一种用于沉积薄膜的方法,一种汽相沉积设备和一种计算机程序产品,以提供降低的清洁频率。在薄膜沉积期间,累积的材料沉积在气相沉积单元的腔室的内壁上。在重复薄膜沉积的同时,气体从累积的材料中散发出来,从而使薄膜的膜厚均匀性变差。该方法包括在沉积在腔室内壁上的累积材料对薄膜厚度的任何影响变得明显之前,沉积非晶膜以覆盖累积的材料。通过用非晶质膜覆盖堆积物,可以防止气体从堆积物散发。这种配置提供了具有改善的厚度均匀性的薄膜。

著录项

  • 公开/公告号US2006280868A1

    专利类型

  • 公开/公告日2006-12-14

    原文格式PDF

  • 申请/专利权人 YOSHITAKE KATO;TERUO IWATA;

    申请/专利号US20060452247

  • 发明设计人 TERUO IWATA;YOSHITAKE KATO;

    申请日2006-06-14

  • 分类号C23C16/00;G06F19/00;B05C11/00;

  • 国家 US

  • 入库时间 2022-08-21 21:05:11

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