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DESIGN AND FABRICATION OF RUGGED FRED, POWER MOSFET OR IGBT
DESIGN AND FABRICATION OF RUGGED FRED, POWER MOSFET OR IGBT
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机译:鲁棒的FRED,功率MOSFET或IGBT的设计和制造
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摘要
An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the reverse direction. The main PN junction has an avalanche voltage equal to or lower than an avalanche voltage of the peripheral field spreading region so substantially the entire said main PN junction participates in avalanche conduction. This rugged FRED structure can also be formed in MOSFETS, IGBTS and the like.
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