UV activation of NH3 for III-N deposition

摘要

Systems are disclosed for fabricating compound nitride semiconductor structures. The systems include a housing defining a processing chamber, a substrate holder disposed within the processing chamber, an NH₃ source, a group-III precursor source, an ultraviolet source, and a CVD showerhead disposed over the substrate holder. The showerhead has a first plenum fluidicly coupled with the NH₃ source, with the first plenum having channels fluidicly coupled with an interior of the processing chamber. The first plenum is optically coupled with the ultraviolet light source at an ultraviolet wavelength to receive light transmitted by the ultraviolet light source within the first plenum. The CVD showerhead also has a second plenum fluidicly coupled with the group-III precursor source, with the second plenum having channels fluidicly coupled with the interior of the processing chamber.