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III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier
III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier
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机译:具有高Al AlGaN扩散势垒的III氮化物光电器件结构
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摘要
A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlxGayN, wherein x+y=1, and x≧0.50. In a specific aspect, AIN is used as a migration/diffusion barrier layer at a thickness of from about 5 to about 200 Angstroms, to suppress flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, e.g., a UV LED optoelectronic device.
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机译:一种III族氮化物电子器件结构,包括掺杂材料,有源区和阻挡材料,该阻挡材料被布置为抑制掺杂剂从掺杂材料向有源区的传输,其中阻挡材料包括高Al含量的Al x Sub > Ga y Sub> N,其中x + y = 1,x≥0.50。在一个特定方面,AIN被用作迁移/扩散阻挡层,其厚度为大约5到大约200埃,以抑制镁和/或硅掺杂剂材料流入III族氮化物电子器件的有源区,例如,UV LED光电设备。
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