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Dual-gate dynamic random access memory device having vertical channel transistors and method of fabricating the same
Dual-gate dynamic random access memory device having vertical channel transistors and method of fabricating the same
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机译:具有垂直沟道晶体管的双栅动态随机存取存储器件及其制造方法
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摘要
A dynamic random access memory (DRAM) device has dual-gate vertical channel transistors. The device is comprised of pillar-shaped active patterns including source regions contacting with a semiconductor substrate, drain regions formed over the drain regions, and channel regions formed between the source and drain regions. The active patterns are disposed in a cell array field. On the active patterns, bit lines are arranged to connect the drain regions along a direction. Between the active patterns, word lines are arranged intersecting the bit lines. Gat insulation films are interposed between the word lines and active patterns.
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