SEMICONDUCTOR DEVICE HAVING LOW RESISTANCE CONTACT TO P-TYPE SEMICONDUCTOR LAYER OF A WIDE BAND GAP COMPOUND AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device having low resistance contact to p-type semiconductor layer of a wide band gap compound and a method for manufacturing the same are provided. The semiconductor device includes a p-type semiconductor layer of a GaN based compound formed on a substrate, a p-type carbon nanotube layer, and a metal contact. The p-type carbon nanotube layer is joined to the p-type semiconductor layer of the GaN based compound, and the metal contact is joined to the p-type carbon nanotube layer.