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GRAIN BOUNDARY BLOCKING FOR STRESS MIGRATION AND ELECTROMIGRATION IMPROVEMENT IN CU INTERCONNECTS
GRAIN BOUNDARY BLOCKING FOR STRESS MIGRATION AND ELECTROMIGRATION IMPROVEMENT IN CU INTERCONNECTS
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机译:铜互连中的应力迁移和电迁移改进的晶粒边界阻挡
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摘要
GRAIN BOUNDARY BLOCKING FOR STRESS MIGRATION AND ELECTROMIGRATION IMPROVEMENT IN CU INTERCONNECTSAbstract Example embodiments of a structure and method for forming a copperinterconnect having a doped region near a top surface. The doped region has implanted alloying elements that block grain boundaries and reduce stress and electro migration. In a first example embodiment, the barrier layer is left over the inter metal dielectric layer during the alloying element implant. The barrier layer is later removed with a planarization process. In a second example embodiment the barrier layer is removed before the alloying element implant and a hard mask blocks the alloying element from being implanted in the inter metal dielectric layer.
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