SEMICONDUCTOR CHIP WITH GATE DIELECTRICS FOR HIGH-PERFORMANCE AND LOW-LEAKAGE APPLICATIONS

摘要

Semiconductor Chip with Gate Dielectricsfor High-Performance and Low-Leakage ApplicationsABSTRACT OF THE DISCLOSUREBoth high performance and low leakage current devices can be formed on a singlewafer without significant additional processing steps by the formation of an ultra-thin gate dielectric and a high-permittivity gate dielectric, respectively, in regions wherein switching speed and low leakage current, respectively, are desired. Logic and embedded memory regions can be performance optimized on the same integrated circuit.FIG. 3C