CERIUM OXIDE CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION THAT ENHANCED POLISHING NON-UNIFORMITY

摘要

Provided is a chemical mechanical polishing(CMP) slurry composition which is large in the polishing velocity of a field oxide layer, is small in the polishing velocity of silicon nitride layer, is high in polishing selectivity and is excellent in the uniformity of a polished surface. The CMP slurry composition comprises 0.1-20 wt% of a cerium oxide abrasive; 0.01-20 wt% of a polycarboxylic acid having a weight molecular weight of 50,000-500,000 or its sa 0.001-10 wt% of an alcohol-based compound; and water. Preferably the alcohol-based compound is selected from the group consisting of methanol, ethanol, propanol, butanol, pentanol, polyethylene glycol, xylitol, triethylene glycol, polypropylene glycol, 2-amino-1-butanol, neopentyl glycol and their mixture. The pH of the composition is adjusted to be 5-10 by adding a compound selected from the group consisting of phosphoric acid, hydrochloric acid, sulfuric acid, nitric acid, ammonia, calcium hydroxide and their mixture.