Slurry Composition for Chemical Mechanical Polishing of Oxide with Enhanced Polishing Performance

摘要

PURPOSE: A slurry composition for polishing the oxide layer of a semiconductor device is provided, to improve polishing property and polishing uniformity. CONSTITUTION: The slurry composition comprises 0.1-50 wt% of a metal oxide fine powder; 0.1-1 wt% of an alkali base; 0.01-1 wt% of a kind of compound selected from the group consisting of primary, secondary and tertiary amines; 0.01-1 wt% of a quaternary ammonium base; 0.001-0.1 wt% of polyethylene glycol; and ultrapure water. Preferably the metal oxide fine powder is at least one selected from the group consisting of silica, alumina, ceria, zirconia and titania and has a size of primary particle of 10-70 nm, a specific surface area of 100-300 m2/g, a size of secondary particle of 100-200 nm and a OH concentration on surface of 0.5-4 /nm2; and the quaternary ammonium base is tetramethylammonium hydroxide; and the polyethylene glycol has a molecular weight of 15,000-25,000.