METHOD FOR SEPARATING RESIST FILM AND REWORK PROCESS

摘要

Disclosed is a method for processing a substrate comprising a step for sequentially forming an Si-C film and a resist film on an object film to be etched which is formed on a substrate, a first etching step for etching the Si-C film using the resist film as a mask, and a second etching step for etching the object film using the resist film and the Si-C film as a mask. This method further comprises a separation step at a desired timing wherein the resist film is separated. The separation step has a preparation sub-step for preparing an organic solvent as a remover, and an application sub-step for applying the organic solvent to the resist film.