GaN-based Semiconductor Light Emitting Diode containing Nickel forming part of n-type ohmic metal

摘要

The present invention relates to an ohmic electrode forming method of a nitride semiconductor light emitting diode, particularly n- type relates to a method of heat treatment at a low temperature to the formation of the n- type ohmic electrode formed on the nitride semiconductor layer. ; n- type ohmic electrode used in the prior art is a titanium / gold (Ti / Au), and the deposition, it is difficult to form an ohmic with a high temperature heat treatment step comprises, during the heat treatment with the high temperature was the risk that the nitride semiconductor layer can be damaged. ; This The present invention is a single layer of a metal containing titanium or nickel (Ni) (Ti), aluminum (Al), gold (Au), platinum (Pt) n- type ohmic electrode of a plurality of layers comprising at least one of addition to form, we propose a method of forming an ohmic to a heat treatment at a lower temperature than the prior art.