首页> 外国专利> DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES EXHIBITING MAGNETORESISTANCE

DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES EXHIBITING MAGNETORESISTANCE

机译:具有磁阻的稀磁半导体纳米线

摘要

Way catalyst to synthesize the nanowire-to provide a coated substrate, a chloride-based vapor transport semiconductor by-based solution and the impurities-lean by a base solution beating at least a portion of the substrate a magnetic semiconductor (DMS) nano It is to disclose a method for processing a wire. By using the phase-based chemical vapor transport, monocrystals dilute magnetic semiconductor nanowires Ga 1- - this new chloride is synthesized Mn x N x (x = 0.07). Having a length of 10㎚ to 100㎚ diameter and up to several tens of micrometers, nanowires are ferromagnetic and 250K to the Curie temperature of not less than room temperature exhibit magnetoresistance.
机译:合成纳米线的方式催化剂-提供涂覆的基材,基于氯的蒸汽传输半导体BY溶液和通过贫碱溶液贫化的杂质,至少将基材的一部分击败了磁性半导体(DMS)纳米公开了一种处理电线的方法。通过使用基于相的化学气相传输,单晶稀释了磁性半导体纳米线Ga 1 --这种新的氯化物被合成为Mn x N x (x = 0.07)。纳米线的直径为10到100毫米,长度可达几十微米,具有铁磁性,在居里温度不低于室温的250K温度下具有磁致电阻。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号