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DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES EXHIBITING MAGNETORESISTANCE
DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES EXHIBITING MAGNETORESISTANCE
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机译:具有磁阻的稀磁半导体纳米线
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摘要
Way catalyst to synthesize the nanowire-to provide a coated substrate, a chloride-based vapor transport semiconductor by-based solution and the impurities-lean by a base solution beating at least a portion of the substrate a magnetic semiconductor (DMS) nano It is to disclose a method for processing a wire. By using the phase-based chemical vapor transport, monocrystals dilute magnetic semiconductor nanowires Ga 1- - this new chloride is synthesized Mn x N x (x = 0.07). Having a length of 10㎚ to 100㎚ diameter and up to several tens of micrometers, nanowires are ferromagnetic and 250K to the Curie temperature of not less than room temperature exhibit magnetoresistance.
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机译:合成纳米线的方式催化剂-提供涂覆的基材,基于氯的蒸汽传输半导体BY溶液和通过贫碱溶液贫化的杂质,至少将基材的一部分击败了磁性半导体(DMS)纳米公开了一种处理电线的方法。通过使用基于相的化学气相传输,单晶稀释了磁性半导体纳米线Ga 1 Sub> - Sub>-这种新的氯化物被合成为Mn x Sub> N x Sub>(x = 0.07)。纳米线的直径为10到100毫米,长度可达几十微米,具有铁磁性,在居里温度不低于室温的250K温度下具有磁致电阻。
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