Large Magnetoresistance in Diluted Magnetic Semiconductors in Quasi-two Dimensional Geometry

摘要

The carrier-induced magnetic solitons in diluted magnetic semiconductors have been introduced by using the gauge-invariant effective Lagrangian. We have discussed the large magnetoresistance effects in diluted magnetic semiconductors in quasi-two dimensional geometry, by using the path-integral method and the supersymmetric sigma formula. We have considered the interaction effects of the localization in DMS. The lowest order contribution in the long-range interactions, which are mediated with massless gauge fields between the magnetic solitons, is given by Hartree and Fock processes for the self-energy.