The method for fabricating p-type, intrinsic and n-type composite light emitting diode using ZnO

摘要

The present invention with the p-type zinc oxide-emitting diode manufacturing method according to the intrinsic structure -n that, in particular, to a new application, such as copper metal is added p- type zinc oxide thin film and a light emitting diode using the same fabrication techniques, the electrical and magnetic devices. ; p-type zinc oxide of the present invention using the - light emitting diode manufacturing method of the intrinsic -n-like structure comprises a first step of depositing a buffer layer on a sapphire single crystal substrate of a low temperature zinc oxide; A second step of depositing an n-type gallium-doped zinc oxide layer over the low-temperature-deposited buffer layer of zinc oxide; The deposited n-type gallium-doped zinc oxide layer a third step of depositing a thin film on the intrinsic zinc oxide; The deposited intrinsic zinc oxide thin film on a p-type zinc oxide thin film layer a fourth step of forming; A fifth step of forming a MESA structure on the p-type zinc oxide thin film layer by a wet etch; And the sixth step of the heat treatment after the output; characterized in that it comprises a