首页> 外国专利> METHOD FOR PREPARING ORGANIC SEMICONDUCTOR THIN FILM USING AROMATIC ENEDIYNE DERIVATIVES, ORGANIC SEMICONDUCTOR THIN FILM USING METHOD THEREOF AND ELECTRONIC DEVICE USING THE SAME

METHOD FOR PREPARING ORGANIC SEMICONDUCTOR THIN FILM USING AROMATIC ENEDIYNE DERIVATIVES, ORGANIC SEMICONDUCTOR THIN FILM USING METHOD THEREOF AND ELECTRONIC DEVICE USING THE SAME

机译:利用芳族乙炔衍生物制备有机半导体薄膜的方法,使用其方法制备有机半导体薄膜的方法以及使用该方法的电子装置

摘要

Provided are a method for preparing an organic semiconductor thin film simply by solution process, an organic semiconductor thin film prepared by the method which is excellent in chemical and electrical stability and reliance, and an electronic device containing the organic semiconductor thin film as a carrier transport layer. The method comprises the steps of coating a precursor solution comprising an aromatic enediyne derivative represented by formula 1, 2 or 3 and an organic solvent on a substrate to form a coating layer; and heat treating the coating layer to form a thin film, wherein X1, X2, X3, X4, X5, X6, Ar1 and Ar2 are independently a substituted or unsubstituted C3-C30 arylene group or a substituted or unsubstituted C2-C30 heteroarylene group; R1, R2, R3, R4, R5 and R6 are independently H, a halogen atom, a nitro group, an amino group, a cyano group, -SiR1R2R3 (wherein R1, R2 and R3 are independently H or a C1-C10 alkyl group), a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C1-C20 alkoxy group, a substituted or unsubstituted C6-C20 arylalkyl group, a substituted or unsubstituted C6-C30 aryloxy group, a substituted or unsubstituted C2-C30 heteroaryloxy group, a substituted or unsubstituted C1-C20 heteroalkyl group, or a substituted or unsubstituted C2-C30 heteroarylalkyl group; R1, R2, R3 and R4 are not 0 simultaneously in the formula 1, R5 and R6 are not 0 simultaneously in the formula 2, and R3 and R4 are not 0 simultaneously in the formula 3; a, b, c, d, e and f are independently an integer of 0-10; a+b+c is not 0; and c+d+f is not 0.
机译:提供一种简单地通过溶液法制备有机半导体薄膜的方法,通过化学和电稳定性和可靠性优异的方法制备的有机半导体薄膜以及包含该有机半导体薄膜作为载流子传输的电子器件。层。该方法包括以下步骤:将包含由式1、2或3表示的芳族二烯衍生物和有机溶剂的前体溶液涂覆在基底上以形成涂层;热处理该涂层,形成薄膜,其中X 1,X 2,X 3,X 4,X 5,X 6,Ar 1和Ar 2独立地为取代或未取代的C 3 -C 30亚芳基或取代或未取代的C 2 -C 30杂亚芳基。 R1,R2,R3,R4,R5和R6独立地为H,卤素原子,硝基,氨基,氰基,-SiR1R2R3(其中R1,R2和R3独立地为H或C1-C10烷基),取代或未取代的C1-C20烷基,取代或未取代的C2-C20烯基,取代或未取代的C2-C20炔基,取代或未取代的C1-C20烷氧基,取代或未取代的C6-C20芳基烷基基团;取代或未取代的C6-C30芳氧基,取代或未取代的C2-C30杂芳氧基,取代或未取代的C1-C20杂烷基或取代或未取代的C2-C30杂芳基烷基;式1中,R1,R2,R3和R4不同时为0,式2中R5和R6不同时为0,式3中R3和R4不同时为0。 a,b,c,d,e和f分别是0-10的整数; a + b + c不为0;并且c + d + f不为0。

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