SEMICONDUCTOR MEMORY DEVICE FOR USING UNUSED AREA OF EDS LITE CONSTRUCTION AS REPAIRING AREA

摘要

A semiconductor memory device is provided to increase use efficiency of a semiconductor memory device in an EDS(Extended Data Storage) write structure by using an unused cell as a repairing cell. A semiconductor memory device comprises a plurality of memory cell arrays(400) by using a 1/n EDS(Extended Data Storage) write structure. Each memory cell array includes normal memory cells(410) storing data, ECC(Error Check/Correction Code) memory cells(430) storing ECC corresponding to the data, and unused cells(415,435) which are unused cells of the normal memory cells and the ECC memory cells. The unused cells replace defective cells of the normal memory cells and the ECC memory cells.