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KNIFE EDGE RING AND SEMICONDUCTOR DEVELOP EQUIPMENT HAVING THE SAME AND WAFER BACK-SIDE WASHING METHOD OF SEMICONDUCTOR DEVELOP EQUIPMENT
KNIFE EDGE RING AND SEMICONDUCTOR DEVELOP EQUIPMENT HAVING THE SAME AND WAFER BACK-SIDE WASHING METHOD OF SEMICONDUCTOR DEVELOP EQUIPMENT
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机译:具有相同的和晶圆背面冲洗方法的刀刃环和半导体显影设备
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摘要
A knife edge ring, semiconductor developing equipment having the same, and a method for cleaning a wafer bottom in the semiconductor developing equipment are provided to prevent a bad pattern from being formed on an upper surface of a wafer edge in a baking process. A body(110) has an inner side wall, an outer side wall, and a top surface having a width, in which a multi-stage inclined portion(113) is formed on the outer side wall. Plural discharge holes(111) penetrate the body, and each of the discharge holes has an inlet positioned along the inclined portion. The inlet has a cross section area larger than that of the discharge hole. A bottom surface of the body is positioned at an obtuse angle to an inclined portion.
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