Method for forming fine pattern of semiconductor device using chemically amplified photoresist compounds including photoacid generator and thermoacid generator

摘要

A chemically-amplified photoresist composition includes a polymer resin, a photo acid generator (PAG), and a thermal acid generator (TAG), where a thermal deprotection temperature of the polymer resin is greater than an acid generation temperature of the TAG. The photoresist composition may be utilized in a photolithography process which includes subjecting a layer of the photoresist composition to photon exposure which causes the PAG to decompose into acid, subjecting the photon-exposed layer of the photo resist composition to a heat treatment which causes the TAG to decompose into acid, and subjecting the heat-treated layer of photoreist composition to a post-exposure bake (PEB) at a temperature which is greater than the temperature of the heat treatment.