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OXYGEN CONTENT SYSTEM AND METHOD FOR CONTROLLING MEMORY RESISTANCE PROPERTIES
OXYGEN CONTENT SYSTEM AND METHOD FOR CONTROLLING MEMORY RESISTANCE PROPERTIES
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机译:氧含量系统和控制记忆电阻特性的方法
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摘要
A memory cell and method for controlling the resistance properties in a memory material are provided. The method comprises: forming manganite; annealing the manganite in an oxygen atmosphere; controlling the oxygen content in the manganite in response to the annealing; and, controlling resistance through the manganite in response to the oxygen content. The manganite is perovskite-type manganese oxides with the general formula RE 1-x AE x MnO y , where RE is a rare earth ion and AE is an alkaline-earth ion, with x in the range between 0.1 and 0.5. Controlling the oxygen content in the manganite includes forming an oxygen-rich RE 1-x AE x MnO y region where y is greater than 3. A low resistance results in the oxygen-rich manganite region. When y is less than 3, a high resistance is formed. More specifically, the process forms a low resistance oxygen-rich manganite region adjacent an oxygen-deficient high resistance manganite region.
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机译:提供了一种存储单元和用于控制存储材料中的电阻特性的方法。所述方法包括:形成锰矿;形成锰矿;形成锰矿。在氧气气氛中对锰进行退火;根据退火控制锰矿中的氧含量;响应于氧含量,控制通过锰的电阻。锰矿为钙钛矿型锰氧化物,通式为RE 1-x AE x MnO y,其中RE为稀土离子,AE为碱土离子,x介于0.1和0.5之间。控制锰矿中的氧含量包括形成富氧的RE 1-x AE x MnO y区域,其中y大于3。低电阻导致富氧锰矿区域。当y小于3时,形成高电阻。更具体地,该方法在缺氧的高电阻锰矿区域附近形成低电阻的富氧锰矿区域。
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