METHOD OF MANUFACTURING ANALOG DEVICE THROUGH FAST TRANSISTOR

摘要

Disclosed is a method of curing a failure of an analog device, wherein the operational range of a transistor is optimized, thereby curing a failure in the analog device and enhancing a yield. In the method, the target of the 1.5V high transistor is modified to a fast condition, thereby eliminating the ring type failure phenomenon caused by FSUBmax/SUB. To this end, the manufacturing margin of a threshold voltage is set as 100 mV, the control specification of GC CD (Critical dimension) is set as ±0.013 mum, and the thickness specification of a gate oxide is set as 23±1 Å.