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Plasma enhanced chemical vapor deposition equipment for the fabrication of organic light emission diode and liquid crystal display panel

机译:等离子增强化学气相沉积设备,用于制造有机发光二极管和液晶显示面板

摘要

The present invention relates to a Plasma Enhanced Chemical Vapor Deposition Apparatus, and more particularly, includes a plurality of process chambers, a load-lock chamber, and a heating chamber. And a clustered plasma chemical vapor deposition apparatus including a transfer chamber for transferring substrates between the chambers, and improving productivity of the clustered plasma chemical vapor deposition apparatus, that is, processing time per hour ( Designed to improve throughput, minimize fab footprint, reduce process gas (SiH4, NH3, H2, N2, PH3, etc.), and reduce power consumption Technology. The present invention is to change the structure and configuration of the plasma chemical vapor deposition apparatus that processed the conventional glass substrate in a single unit in order to achieve the above-mentioned technical problem, so that the glass substrate can be processed in two units (Dual ) Clustered plasma chemical vapor deposition apparatus of glass substrate processing method is implemented, and related general technology is provided.;Plasma Chemical Vapor Deposition Chamber, Cluster, Load Lock Chamber, Transfer Chamber, Vacuum Robot
机译:等离子体增强化学气相沉积设备技术领域本发明涉及一种等离子体增强化学气相沉积设备,更具体地,包括多个处理室,负载锁定室和加热室。以及一种集群式等离子体化学气相沉积设备,包括用于在腔室之间转移基板并提高集群式等离子体化学气相沉积设备的生产率,即每小时的处理时间(旨在提高产量,最小化晶圆厂占地面积,减少工艺)气体(SiH 4,NH 3,H 2,N 2,PH 3等),并降低功耗技术本发明是要改变在单个单元中对常规玻璃基板进行处理的等离子体化学气相沉积设备的结构和构造。为了解决上述技术问题,使玻璃基板可以在两个单元中进行处理(双),实现了玻璃基板的聚束等离子体化学气相沉积装置的加工方法,并提供了相关的通用技术。箱,仪表板,负载锁定箱,传送箱,真空机器人

著录项

  • 公开/公告号KR100719330B1

    专利类型

  • 公开/公告日2007-05-18

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20050091958

  • 发明设计人 배준호;

    申请日2005-09-30

  • 分类号H01L21/205;G02F1/13;

  • 国家 KR

  • 入库时间 2022-08-21 20:32:09

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